IJSTR >> Volume 9 - Issue 1, January 2020 Edition

[Full Text]

AUTHOR(S)

N.Kavitha, R. Chandramohan, A. Mohamed Haroon Basha, K.K. Sivakumar and R. Swaminathan

KEYWORDS

CdS thin film, Europium doping, structural, optical, photovoltaic properties

ABSTRACT

The n type CdS with different doping level of Europium and p type PbS heterojunction solar cell was fabricated using Chemical Bath Deposition. CdS window layer was deposited on Indium tin Oxide (ITO) glass with 1% and 3% doping concentration of Europium. PbS absorber layer of thickness around 0.9 micron was grown on ITO/CdS to fabricate the p–n junction. The prepared three films were analyzed by X-ray diffraction, scanning electron microscopy (SEM), energy dispersive X-Ray spectroscopy (EDS), UV-Vis spectroscopy and photovoltaic studies. The photovoltaic properties including J–V characteristics, short-circuit current (Isc), open-circuit voltage (Voc), fill factor (ff), efficiency (η) of CdS/PbS heterojunction cells have been as well examined. The results show that increasing the doping level of Europium on CdS improved the performances of the fabricated photovoltaic cells A high efficiency was observed at 3 % doping of Eu in CdS.

REFERENCES

[1] M. Anbarasi, V.S. Nagarethinam, R. Baskaran, V. Narasimman, Pacific Science Review A: Natural Science and Engineering, p. 1-6, 2016.
[2] F. Lisco, P.M. Kaminski, A. Abbas, K. Bass, J.W. Bowers, G. Claudio, M. Losurdo, J.M. Walls, Thin Solid Films, 582 , p .323-327, 2015.
[3] G.H. Tariq and M. Anis-ur-Rehman, Key Engineering Materials Vols, 510-511, p.156-162, 2012.
[4] Rapid Deposition Technology Holds the Key for World's Largest Solar Manufacturer, http://www.nrel.gov/ awards/2003_hrvtd.html 2009 (Access date 2014).
[5] P. Kelly, R. Arnell, Vacuum, 56, 159. 2000.
[6] R.D. Arnell, P.J. Kelly, Surf. Coat. Technol., 112, 170, 1999.
[7] C.S. Ferekides, D. Marinskiy, S. Marinskaya, B. Tetali, D. Oman, D.L. Morel, Conference Record of the Twenty Fifth PVSC, p.751, 13–17, May 1996.
[8] H Moualkia, S Hariech, M S Aida, N Attaf1 and E L Laifa, J. Phys. D: Appl. Phys. 42 135404, 2009.
[9] A.A. Yadav, M.A. Barote, E.U. Masumdar, Solid State Sciences 12 , p.1173-1177, 2010.
[10] A Sanchez, P J Sebastian and 0 Gomez-Daza Sci. Techno., 10, p.87-90, 1995.
[11] K.M.Garadkar, A. A. Patil, P.V. Korake, P. P. Hankare Archives of Applied Science Research, 2 (5) ,429-437, 2010.
[12] Y H Sun, Y J Ge, W W Li, D J Huang, F Chen, L Y Shang, P X Yang1, and J H Chu, Journal of Physics: Conference Series 276, 012187, 2011.
[13] SubhashChander, M.S.Dhaka, Thin Solid Films, 638, p. 179-188, 2017.
[14] G. Sasikala, R. Dhanasekaran, C. Subramanian, Thin Solid Films 302, p.71- 76, .1997.
[15] C. D. G. Lazos, E. Rosendo, B. H. Juarez, G. G. Salgado, T. Diaz, M. R.Falfan, A. I. Oliva, P. Quintana, D. H. Aguilar, W. Cauich, M. Ortega, Y. Matsumoto J. Electrochem. Soc. 155, p.158- 162. 2008.
[16] N. Kavitha, R. Chandramohan, S. Valanarasu, T. A. Vijaya, S. Rex Rosario, A. Kathalingam, J Mater Sci: Mater Electron, 27, p. 2574-2580, 2016.
[17] P. Velusamy, R. Ramesh Babu, K. Ramamurthi, E. Elangovan, J. Viegas, M.S. Dahlem, M. Arivanandhan, Ceramics International 42, p. 12675–12685, 2016.
[18] KamaldeepKaur, Gurmeet Singh Lotey, N.K. Verma Materials Science in Semiconductor Processing 19, p.6–10, 2014.
[19] M. Muthusamy S. Muthukumaran, Optik - International Journal for Light and Electron Optics 126, p. 5200-5206, 2015.
[20] Pelleg, E. Elish, J. Vac. Sci. Technol. A 20 , p.754-761, 2002.
[21] M. Vasudeva Reddy, G. Sreedevi, Chinho Park, R.W. Miles, K. T. Ramakrishna, Reddy Current Applied Physics 15, 588-598, 2015.
[22] S. Yılmaz, S.B. Toreli, I. Polat, M.A. Olgar, M. Tomakin, E. Bacaksız, Materials Science in Semiconductor Processing 60, p. 45–52, 2017.
[23] Shadia J. Ikhmayies, Hassan K. Juwhari, Riyad N. Ahmad-Bitar, Journal of Luminescence 141, p.27–32, 2013.
[24] R. Premarani, J. JebarajDevadasan, S. Saravanakumar, R. Chandramohan, T. Mahalingam, , J Mater Sci: Mater Electron, 26 , p. 2059- 2065, 2015.
[25] A.S. Obaid, n , M.A. Mahdi, Z. Hassan, M. Bououdina, Materials Science in Semiconductor Processing 15, p.564–571, 2012.
[26] A. M. S. Arulanantham, S. Valanarasu, K. Jeyadheepan, A. Kathalingam, I. Kulandaisamy, J Mater Sci: Mater Electron,28, 13257, 2017.
[27] C. Santiago Tepantlan, Revista Mexicana De Fisica, 54 (2) , 112–117, 2008.
[28] H L pushpalatha, S. Bellappa, T N Narayanaswamy, R Ganesha, Indian Journal of Pure &Applied Physics, 52, 545-549, 2014.
[29] M. A. Barote, A. A. Yadav, T. V. Chavan, E. U. Masumdar, Digest Journal of Nanomaterials and Biostructures 6, p. 979-990, 2011.
[30] A.S. Obaid, M.A. Mahdi, Z. Hassan, M. Bououdin, Int. J. Hydrog. Energy 38, 807, 2013.
[31] J.H. Borja, Y.V. Vorobiev, R.R. Bon, Sol. Energy Mater. Sol.Cells 95, p.1882, 2011.