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IJSTR >> Volume 10 - Issue 2, February 2021 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



Comparison Of Parasitic Performance Of Shorted Gate And Independent Gate Finfets

[Full Text]

 

AUTHOR(S)

Ahsin Murtaza Bughio, Junaid Iqbal, Khalil Muhammad Zuhaib, Junaid Ahmed Uqaili, Toufique Ahmed Soomro, U. A. Khan

 

KEYWORDS

FinFET, Numerical Simulations, Semiconductor devices, Nanotechnology, Device parasitics

 

ABSTRACT

For the RF analog applications, the two variants of FinFETs i.e., Independent gate (IG) and Short-circuited gate (SG) must be analyzed to understand the effect of different biases at the two gates. The variability of the device due to process variations fluctuates in accordance to the FinFET bias, at least for DC output. This paper provides a novel and systematic study of variability focusing on AC parameters in both SG and IG conditions for a 2-dimensional FinFET. Green's Function technique which uses the linearization of the non-linear responses is used to conduct the research utilizing a quasilinear state for the study of nonlinear variability [1], [2]. Study of FinFET's AC variability involves physical and geometric parameters which are most relevant for our analysis, as the parasitics of the FinFET are significantly affected by these parameters. The parasitics also varied with the two variants of the FinFET device.

 

REFERENCES

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