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IJSTR >> Volume 10 - Issue 2, February 2021 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



Study on Compact Equivalent Circuit Model for RF CMOS Transistor

[Full Text]

 

AUTHOR(S)

Rabnawaz Sarmad Uqaili, Faraz Bashir Soomro, Junaid Ahmed Uqaili, Ahsin Murtaza Bughio, Khalid Ali Khan

 

KEYWORDS

CMOS, equivalent circuit model, MOSFET, millimeter-wave, radio frequency, small-signal modeling, scattering parameters.

 

ABSTRACT

In this study, a physical-based radio-frequency (RF) compact equivalent circuit model (CECM) for complementary metal-oxide-semiconductor (CMOS) transistor and its parameter extraction is presented. The whole structure of CECM that includes a small-signal equivalent circuit model of the transistor, a MOSFET small-signal substrate model, an input and output ground-signal-ground (GSG) pad model, a pad coupling model and a metal interconnection model are briefly studied and discussed. Based on this study, a complete test structure model for RF CMOS is designed and the initial values of parameters are extracted by using the analytical method. The multi-bias scattering parameters (S-Parameters) of model correspondence to the experimentation are validated up to 66 GHz and 220 GHz respectively. A good agreement has been achieved between the simulation and experimental under multi-bias conditions.

 

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