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IJSTR >> Volume 2- Issue 11, November 2013 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



Optical And Electrical Properties Of P-Type Si<100> Modification In Visible Region For Silicon Based Microphotonics

[Full Text]

 

AUTHOR(S)

Kifah Q. Saleh

 

KEYWORDS

Index terms: surface texture studies, spectroscopy studies, Optical & Electrical properties of indirect energy gap materials, size-dependent absolute quantum yield, Nano- laser active medium & thermal effect on material behavior.

 

ABSTRACT

Abstract: The development of Silicon surface texture would revolutionize the growing field of Microphotonics and its applications in different fields .The objective of this study is to modify the Optical and Electrical properties of Silicon in visible region at room temperature. So, for that purpose, we have used thermal treatment method with applied M-field "1000G.". We have found that p-type Si is more response to this method. Optical and Electrical study were carried out using CW photoluminescence emission technique (Ar+ Laser emitting at 514.5 nm), Ellipsometry (632.8nm), AFM and IV. We were obtained increasing emission intensity in band [~ (2.0-1.6) eV] and an improvement in PL emission profile. We were recorded irregular behaviors in extinction coefficient values of treated samples. In this study, we recorded at the first time different behavior in IV and change in surface texture which provides new surface profile for improvements of Si technology.

 

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