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IJSTR >> Volume 2- Issue 10, October 2013 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Visible Photoluminescence Enhancement Of Silicon Oxide

[Full Text]



Kifah Q. Salih



Key words: Visible photoluminescence, SiO2, surface texture and surface defects



Abstract: We have been proposed a treatment method for the visible photoluminescence enhancement of SiO2 layer thermally grown on Si<100> wafer by surface texture modification. We have used liquid nitrogen (LN2) as treatment method. That method applied at different exposure time from 10min to 30sec.Room temperature photoluminescence (PL) of treated SiO2/Si samples was studied using the 514.5 nm line of an Ar+ Laser.PL signal in the wavelength rang 530-880 nm was observed .AFM and SEM have used to study the surface texture change. Samples of an exposure time (1 min, ±30sec) show emission at 580-880 nm with a maximum PL intensity .We have observed the PL intensity and spectra shape of treated samples are dependent on the surface texture modification. The visible PL is enhanced 2-fold by the surface treatment. The origin of the visible PL emission of SiO2 has been investigated on QCLC model.



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