Sensing Behavior Of CuO-Doped SnO2 Thick Film Sensor For H2S Detection
J.K. Srivastava, Amit Gupta, Anand A. Bhaskar
Key words: gas sensor, thick film, screen printing, sol-gel, sensitivity, tin oxide.
Abstract: The effect of CuO doping on the electrical resistance and the sensitivity of thick film gas sensors based on CuO- doped (1%, 2% and 5% by wt.) SnO2has been investigated by us. A suitable gas sensor structure wasfabricated on 1˝x1˝ alumina substrate using thick film technology. The fabricated sensor’s reaction with H2S gas (250 ppm-1000 ppm)was tested in the temperature range of 150- 350˚C. At 250˚C the sensor with 5% CuO doping was found to be most sensitive for H2S gas .The electrical resistance and the sensitivity were increased by increasing the concentration of CuO. The substitution of Sn+4 by Cu+2 leads to the creation of oxygen vacancies. The increased oxygen deficiency is believed to be responsible for enhancing the resistance.
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