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IJSTR >> Volume 3- Issue 6, June 2014 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



Radiations On Static Random Access Memory Cell

[Full Text]

 

AUTHOR(S)

Birinderjit Singh Kalyan

 

KEYWORDS

Keywords: BL, 0.35µm technology, S-R flip flops, SRAM, current sense amplifiers, Single event upset, Soft error rate, Total ionizing dose, Radiation effects, Single event transient

 

ABSTRACT

Abstract: With increased memory capacity usually comes increased bit line parasitice capacitance. This increased bit line capacitance in turn slows down voltage sensing and makes bit line voltage swing energy expensive resulting in slower more energy hungry memories. A full description of the various methods is beyond the scope of this article; instead, the focus is on providing primary developments that have taken place in the area of radiation effects on SRAM In this paper a comparision of different current mode sense amplifiers with flip flop structures using 0.35µm technology is presented with the effect of Radation effectv of 100 Krad exposures. Simulations results are given regarding sensing delay and power dissipation.

 

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