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IJSTR >> Volume 9 - Issue 1, January 2020 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Comparison Analysis Of N-Channel And P-Channel SOI / Bulk Finfets

[Full Text]



V Vijayalakshmi , Dr. B. Mohan Kumar Naik



nFinFET, pFinFET, SOI FinFET, Bulk FinFET, Drain Current.



In this research paper, a 3 dimensional device simulation of 20 nm n-channel and p-channel SOI FinFET and Bulk FinFET have been studied. The electrical parameters such as electrostatic potential, electric field, current density, transfer characteristics, output characteristics, drive current, OFF state current and transconductance are investigated based on the various bias voltages. The transfer characteristics of SOI FinFETs are compared with that of bulk FinFETs. Based on the comparison analysis SOI FinFETs are more dominant over bulk FinFETs because of large ION/IOFF ratio in wide circuit applications and semiconductor memories.



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