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IJSTR >> Volume 5 - Issue 5, May 2016 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



Raman, PL And Hall Effect Studies Of Cdse Thin Film Deposited By Chemical Bath Deposition

[Full Text]

 

AUTHOR(S)

Bijumon C C, V.Senthil Kumar

 

KEYWORDS

CdSe, Raman Spectroscopy, Photo luminescence, Hall effect, Mobility, Carrier concentration

 

ABSTRACT

CdSe thin films were fabricated on glass substrate by chemical bath deposition method. The films were deposited by keeping the deposition time a constant and also by keeping solution bath temperature a constant. Some of the deposited films were annealed . The as-deposited and annealed films were subjected to various spectroscopic studies such as Raman Spectroscopy and Photo luminescence spectroscopy. The hall effect measurement shows that CdSe is an n-type semiconductor and its resistivity decreases on annealing

 

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